The next generation of flash memory chips that replace the floating gate with thin layers of material that "trap the charge." The charge trap is a sandwich of materials such as silicon-oxide-nitride-oxide-silicon (SONOS), metal-oxide-nitride-oxide-silicon (MONOS) and tantalum-aluminum oxide-nitride-oxide-silicon (TANOS), all of which are substantially smaller than the floating gate.
Charge trap flash chips allow more dense flash memory to be fabricated and are expected to extend the life of NAND flash until a new non-volatile memory technology replaces flash entirely (see future memory chips). See flash memory.
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