Intel, Numonyx Tout 'Key Breakthrough' On Computer Memory

The new non-volatile memory technology developed by Santa Clara, Calif.-based Intel and Rolle, Switzerland-based Numonyx "combines many of the benefits of today's various memory types," the two companies said in a joint statement Wednesday.

Researchers at Intel and Numonyx "have demonstrated a 64-Mb test chip that enables the ability to stack, or place, multiple layers of PCM arrays within a single die," the statement said. Key to the breakthrough was the successful use of a new Ovonic Threshold Switch as a selector in building PCM cells and arrays, the researchers said.

"The achievements are a result of an ongoing joint research program between Numonyx and Intel that has been focusing on the exploration of multi-layered or stacked PCM cell arrays. Intel and Numonyx researchers are now able to demonstrate a vertically integrated memory cell -- called PCMS (phase change memory and switch)."

PCM, also known as PRAM, is noted for its high performance levels -- thousands of times faster than hard disk drives, according to sources -- and also degrades more slowly than Flash memory. But challenges for developers of PCM include the memory type's temperature sensitivity and process cost disadvantages as compared to Flash.

Numonyx, a private entity, was founded in March 31 by Intel, Geneva-based semiconductor manufacturer STMicroelectronics and Francisco Partners, a technology-focused private equity firm headquartered in San Francisco.