Finwave Semiconductor

Headquarters: Waltham, Mass.

CEO: Bin Lu

Funding: The Series A funding round of $12.2 million follows a $4.3 million grant from the U.S. Department of Energy Advanced Research Projects Agency.

Investors: The round was led by Fine Structure Ventures with participation from Citta Capital, Soitec, Safar Partners and Alumni Ventures.

What company does: Finwave Semiconductor, which recently emerged from stealth mode, develops breakthrough 3DGaN transistor technology that’s designed to optimize the potential of Gallium Nitride. The company is applying the 3DGaN technology to improve the performance of 5G devices.

CEO Quote: “Finwave was founded with the mission to scale [GaN FinFET] technology from lab to high-volume products that benefit society, and 5G presents the perfect market opportunity for the scale, performance gains and cost advantages this technology brings. Having solved numerous manufacturing challenges and successfully created a fabrication process using standard 8-inch Si CMOS tools, Finwave is leading the way in commercializing the 3DGaN technology for 5G.”