Everspin Technologies, Chandler, Ariz., in March unveiled its nvNitro line of storage accelerators that the company said offers extremely fast read and write times with ultra-low latency. The initial models are available with 1 GB or 2 GB of Spin Torque MRAM, based on its 256-Mb DDR3 ST-MRAM. Larger models with up to 16-GB capacity using Everspin’s 1-Gb DDR4 ST-MRAM are slated for release this year.
The nvNitro ES1GB and ES2GB offer 1.5 million IOPS with 6-microsecond end-to-end latency. They are available in a half-height, half-length PCIe format with either NVMe or MMIO access modes. The use of ST-MRAM provides for persistent data without the need for supercapacitors or battery backup.