Samsung Intros V-NAND Memory Products
Samsung Electronics unveiled new V-NAND (Vertical NAND) memory devices and technology it said are targeted at accelerating next-generation data processing and storage systems.
New from Samsung was a 1-terabit V-NAND chip. Slated for availability in 2018, the chip is expected to allow Samsung to pack 2 TB of memory in a single V-NAND package. Samsung also sampled what it called the industry’s first 16-TB NGSFF SSD (pictured) aimed at high-capacity, high-performance systems. The company showed a reference server system that packs 576 TB in a 1U device using 36 16-TB NGSFF SSDs with the ability to process about 10 million random read IOPS. These SSDs are slated to ship by year-end. The company also showed its first Z-SSD product, the SZ985, which features only 15 microseconds of read latency time, which Samsung said is about one-seventh that of NVMe SSDs.